LOW-TEMPERATURE GROWN HIGH QUALITY ULTRA-THIN CoTiO3 GATE DIELECTRICS

ABSTRACT

A gate oxide and method of fabricating a gate oxide that produces a more reliable and thinner equivalent oxide thickness than conventional SiO 2  gate oxides are provided. Gate oxides formed from alloys such as cobalt-titanium are thermodynamically stable such that the gate oxides formed will have minimal reactions with a silicon substrate or other structures during any later high temperature processing stages. The process shown is performed at lower temperatures than the prior art, which inhibits unwanted species migration and unwanted reactions with the silicon substrate or other structures. Using a thermal evaporation technique to deposit the layer to be oxidized, the underlying substrate surface smoothness is preserved, thus providing improved and more consistent electrical properties in the resulting gate oxide.

CROSS REFERENCE TO RELATED APPLICATION

This application is Divisional of U.S. application Ser. No. 12/176,949filed Jul. 21, 2008, which is a Continuation of U.S. application Ser.No. 11/036,296 filed on Jan. 14, 2005, now issued as U.S. Pat. No.7,429,515, which is a Continuation of U.S. application Ser. No.10/028,643 filed on Dec. 20, 2001, now issued as U.S. Pat. No. 6,953,730the specifications of which are incorporated herein by reference intheir entirety.

FIELD OF THE INVENTION

The invention relates to semiconductor devices and device fabrication.Specifically, the invention relates to gate oxide layers of transistordevices and their method of fabrication.

BACKGROUND OF THE INVENTION

In the semiconductor device industry, particularly in the fabrication oftransistors, there is continuous pressure to reduce the size of devicessuch as transistors. The ultimate goal is to fabricate increasinglysmaller and more reliable integrated circuits (ICs) for use in productssuch as processor chips, mobile telephones, or memory devices such asDRAMs. The smaller devices are frequently powered by batteries, wherethere is also pressure to reduce the size of the batteries, and toextend the time between battery charges. This forces the industry to notonly design smaller transistors, but to design them to operate reliablywith lower power supplies.

A common configuration of a transistor is shown in FIG. 1. While thefollowing discussion uses FIG. 1 to illustrate a transistor from theprior art, one skilled in the art will recognize that the presentinvention could be incorporated into the transistor shown in FIG. 1 toform a novel transistor according to the invention. The transistor 100is fabricated in a substrate 110 that is typically silicon, but could befabricated from other semiconductor materials as well. The transistor100 has a first source/drain region 120 and a second source/drain region130. A body region 132 is located between the first source/drain regionand the second source/drain region, the body region 132 defining achannel of the transistor with a channel length 134. A gate dielectric,or gate oxide 140 is located on the body region 132 with a gate 150located over the gate oxide. Although the gate dielectric can be formedfrom materials other than oxides, the gate dielectric is typically anoxide, and is commonly referred to as a gate oxide. The gate may befabricated from polycrystalline silicon (polysilicon) or otherconducting materials such as metal may be used.

In fabricating transistors to be smaller in size and reliably operatingon lower power supplies, one important design criteria is the gate oxide140. A gate oxide 140, when operating in a transistor, has both aphysical gate oxide thickness and an equivalent oxide thickness (EOT).The equivalent oxide thickness quantifies the electrical properties,such as capacitance, of a gate oxide 140 in terms of a representativephysical thickness. EOT is defined as the thickness of a theoreticalSiO₂ layer that describes the actual electrical operatingcharacteristics of the gate oxide 140 in the transistor 100. Forexample, in traditional SiO₂ gate oxides, a physical oxide thickness maybe 5.0 nm, but due to undesirable electrical effects such as gatedepletion, the EOT may be 6.0 nm. A gate oxide other than SiO₂ may alsobe described electrically in terms of an EOT. In this case, thetheoretical oxide referred to in the EOT number is an equivalent SiO₂oxide layer. For example, SiO₂ has a dielectric constant ofapproximately 4. An alternate oxide with a dielectric constant of 20 anda physical thickness of 100 nm would have an EOT of approximately 20nm=(100*(4/20)), which represents a theoretical SiO₂ gate oxide.

Lower transistor operating voltages and smaller transistors requirethinner equivalent oxide thicknesses (EOTs). A problem with theincreasing pressure of smaller transistors and lower operating voltagesis that gate oxides fabricated from SiO₂ are at their limit with regardsto physical thickness and EOT. Attempts to fabricate SiO₂ gate oxidesthinner than today's physical thicknesses show that these gate oxides nolonger have acceptable electrical properties. As a result, the EOT of aSiO₂ gate oxide 140 can no longer be reduced by merely reducing thephysical gate oxide thickness.

Attempts to solve this problem have led to interest in gate oxides madefrom oxide materials other than SiO₂. Certain alternate oxides have ahigher dielectric constant (k), which allows the physical thickness of agate oxide 140 to be the same as existing SiO₂ limits or thicker, butprovides an EOT that is thinner than current SiO₂ limits.

A problem that arises in forming an alternate oxide layer on the bodyregion of a transistor is the process in which the alternate oxide isformed on the body region. Recent studies show that the surfaceroughness of the body region has a large effect on the electricalproperties of the gate oxide, and the resulting operatingcharacteristics of the transistor. The leakage current through aphysical 1.0 nm gate oxide increases by a factor of 10 for every 0.1increase in the root-mean-square (RMS) roughness. In forming analternate oxide layer on the body region of a transistor, a thin layerof the alternate material to be oxidized (typically a metal) must firstbe deposited on the body region. Current processes for depositing ametal or other alternate layer on the body region of a transistor areunacceptable due to their effect on the surface roughness of the bodyregion.

FIG. 2A shows a surface 210 of a body region 200 of a transistor. Thesurface 210 in the Figure has a high degree of smoothness, with asurface variation 220. FIG. 2B shows the body region 200 during aconventional sputtering deposition process stage. During sputtering,particles 230 of the material to be deposited bombard the surface 210 ata high energy. When a particle 230 hits the surface 210, some particlesadhere as shown by particle 235, and other particles cause damage asshown by pit 240. High energy impacts can throw off body regionparticles 215 to create the pits 240. A resulting layer 250 as depositedby sputtering is shown in FIG. 2C. The deposited layer/body regioninterface 255 is shown following a rough contour created by thesputtering damage. The surface of the deposited layer 260 also shows arough contour due to the rough interface 255.

In a typical process of forming an alternate material gate oxide, thedeposited layer 250 is oxidized to convert the layer 250 to an oxidematerial. Existing oxidation processes do not, however, repair thesurface damage created by existing deposition methods such assputtering. As described above, surface roughness has a large influenceon the electrical properties of the gate oxide and the resultingtransistor.

What is needed is an alternate material gate oxide that is more reliableat existing EOTs than current gate oxides. What is also needed is analternate material gate oxide with an EOT thinner than conventionalSiO₂. What is also needed is an alternative material gate oxide with asmooth interface between the gate oxide and the body region. Becauseexisting methods of deposition are not capable of providing a smoothinterface with an alternate material gate oxide, what is further neededis a method of forming an alternate material gate oxide that maintains asmooth interface.

Additionally, at higher process temperatures, any of several materialsused to fabricate the transistor, such as silicon, can react with othermaterials such as metals or oxygen to form unwanted silicides or oxides.At high process temperatures, materials such as dopants can also migrateto unwanted areas, changing the desired structure or composition profilethat is desired. What is needed is a lower temperature process offorming gate oxides that prevents migration and the formation ofunwanted byproduct materials.

SUMMARY OF THE INVENTION

A method of forming a gate oxide on a surface such as a transistor bodyregion is shown where a metal alloy layer is deposited by thermalevaporation on the body region. The metal alloy layer is then oxidizedto convert the metal alloy layer to a gate oxide. In one embodiment, themetal alloy layer includes cobalt (Co) and titanium (Ti). One embodimentof the invention uses an electron beam source to evaporate the metalalloy layer onto the body region of the transistor. The oxidationprocess in one embodiment utilizes a krypton (Kr)/oxygen (O₂) mixedplasma process.

In addition to the novel process of forming a gate oxide layer, atransistor formed by the novel process exhibits novel features that mayonly be formed by the novel process. Thermal evaporation deposition of ametal alloy layer onto a body region of a transistor preserves anoriginal smooth surface roughness of the body region in contrast toother prior deposition methods that increase surface roughness. Theresulting transistor fabricated with the process of this invention willexhibit a gate oxide/body region interface with a surface roughnessvariation as low as 0.6 nm.

These and other embodiments, aspects, advantages, and features of thepresent invention will be set forth in part in the description whichfollows, and in part will become apparent to those skilled in the art byreference to the following description of the invention and referenceddrawings or by practice of the invention. The aspects, advantages, andfeatures of the invention are realized and attained by means of theinstrumentalities, procedures, and combinations particularly pointed outin the appended claims.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 shows a common configuration of a transistor.

FIG. 2A shows a smooth surface of a body region of a transistor.

FIG. 2B shows a deposition process according to the prior art.

FIG. 2C shows a deposited film on a body region according to the priorart.

FIG. 3A shows a deposition process according to the invention.

FIG. 3B shows a magnified view of a deposited film on a body region fromFIG. 3A.

FIG. 4A shows a deposited film on a body region according to theinvention.

FIG. 4B shows a partially oxidized film on a body region according tothe invention.

FIG. 4C shows a completely oxidized film on a body region according tothe invention.

FIG. 5 shows a perspective view of a personal computer.

FIG. 6 shows a schematic view of a central processing unit.

FIG. 7 shows a schematic view of a DRAM memory device.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

In the following detailed description of the invention, reference ismade to the accompanying drawings which form a part hereof, and in whichis shown, by way of illustration, specific embodiments in which theinvention may be practiced. In the drawings, like numerals describesubstantially similar components throughout the several views. Theseembodiments are described in sufficient detail to enable those skilledin the art to practice the invention. Other embodiments may be utilizedand structural, logical, and electrical changes may be made withoutdeparting from the scope of the present invention. The terms wafer andsubstrate used in the following description include any structure havingan exposed surface with which to form the integrated circuit (IC)structure of the invention. The term substrate is understood to includesemiconductor wafers. The term substrate is also used to refer tosemiconductor structures during processing, and may include other layersthat have been fabricated thereupon. Both wafer and substrate includedoped and undoped semiconductors, epitaxial semiconductor layerssupported by a base semiconductor or insulator, as well as othersemiconductor structures well known to one skilled in the art. The termconductor is understood to include semiconductors, and the terminsulator or dielectric is defined to include any material that is lesselectrically conductive than the materials referred to as conductors.

The term “horizontal” as used in this application is defined as a planeparallel to the conventional plane or surface of a wafer or substrate,regardless of the orientation of the wafer or substrate. The term“vertical” refers to a direction perpendicular to the horizonal asdefined above. Prepositions, such as “on”, “side” (as in “sidewall”),“higher”, “lower”, “over” and “under” are defined with respect to theconventional plane or surface being on the top surface of the wafer orsubstrate, regardless of the orientation of the wafer or substrate. Thefollowing detailed description is, therefore, not to be taken in alimiting sense, and the scope of the present invention is defined onlyby the appended claims, along with the full scope of equivalents towhich such claims are entitled.

FIG. 3A shows an electron beam evaporation technique to deposit amaterial on a surface such as a body region of a transistor. In FIG. 3A,a substrate 310 is placed inside a deposition chamber 300. The substratein this embodiment is masked by a first masking structure 312 and asecond masking structure 314. In this embodiment, the unmasked region316 includes a body region of a transistor, however one skilled in theart will recognize that other semiconductor device structures mayutilize this process. Also located within the deposition chamber 300 isan electron beam source 330, and a target 334. In one embodiment, asingle electron beam source is used and a single target is used. Howevermultiple targets and electron beam sources could be used. In oneembodiment, a single target is used that includes an alloy material oftwo elements. In alternative embodiments, more than two elements areincluded in an alloy target. Although in this embodiment, an electronbeam evaporation technique is used, it will be apparent to one skilledin the art that other thermal evaporation techniques can be used withoutdeparting from the scope of the invention.

During the evaporation process, the electron beam source 330 generatesan electron beam 332. The electron beam hits the target 334 and heats aportion of the target enough to cause the surface of the target toevaporate. The evaporated material 336 is then distributed throughoutthe chamber 300, and the material 336 deposits on surfaces that itcontacts, such as the exposed body region 316. The depositing materialbuilds up to form a layer 320 of material that is chemically the same asthe target 334.

In one embodiment, the evaporation process is performed at a backgroundpressure of approximately 1×10⁻⁷ torr. In one embodiment the target ispreheated for several minutes before the evaporation process begins. Onetypical evaporation rate for this process includes a rate of 0.5 to 1.0nm/second. A device such as a quartz crystal microbalance is used toassist monitoring of the deposition process in one embodiment. Using ametal evaporation process as described above, a packing density of thelayer 320 approaches 1.0. In other words, the layers 320 generated bythis process will have close to zero lattice defects.

In one embodiment of the invention, the deposited material layer 320includes a multiple metal alloy layer. In one embodiment of theinvention, the deposited material layer 320 includes cobalt (Co) andtitanium (Ti). In one embodiment of the invention, the target is asingle target of cobalt and titanium alloy. In one embodiment, twotargets containing one element each are used to form the layer 320. Oneadvantage of the thermal evaporation process is the high purity targetsthat are available for the process. Zone refined targets have purity ashigh as 99.9999%. Additionally, the evaporation process itself furtherpurifies the target materials thus increasing the final purity of thelayer 320 beyond even the target purity. The more violent nature ofother deposition methods tends to mix impurities into the depositedlayer during deposition. Therefore a uniquely pure layer 320 andfurther, a uniquely pure layer oxide is possible using this novelmethod.

The choice of materials for oxidation is based on the properties of theoxide formed. Considerations included the thermodynamic stability of theoxide with silicon, the diffusion coefficient of the oxide at highprocessing temperatures such as 1000° K, the lattice match of the oxidewith silicon, the dielectric constant of the oxide, and the conductionband offset of the oxide. In one embodiment, the dielectric constant isapproximately 40, which is approximately ten times he dielectricconstant of SiO₂. In one embodiment, the deposited material layer 320 issubstantially amorphous. A lower presence of grain boundaries in thesubstantially amorphous material layer 320 reduces the leakage currentthrough the final gate oxide. Although the amorphous form is preferred,the materials chosen for oxidation, such as cobalt and titanium are alsoacceptable in crystalline form.

A thermal evaporation process such as the electron beam evaporationtechnique described above does not cause the surface damage that isinherent in other deposition techniques such as the sputtering techniqueshown in FIG. 2B. This allows a very thin layer of material to bedeposited on a body region of a transistor, while maintaining a smoothinterface. A thermal evaporation process such as the electron beamevaporation technique described above also allows low processingtemperatures that inhibit the formation of unwanted byproducts such assilicides and oxides. In one embodiment, the thermal evaporation isperformed with a substrate temperature between approximately 100 and150° C.

FIG. 3B shows a magnified view of the body region 316 and the depositedlayer 320 from FIG. 3A. The interface 340 is shown with a roughnessvariation 346. The surface of the deposited layer 348 is also shown witha similar surface roughness. One possible surface variation 346 would bean atomic layer variation. In atomic smoothness, the greatest differencein surface features is between a first atomic layer as indicated bylayer 342 and a second atomic layer 344. The thermal evaporationdeposition technique described above preserves atomic smoothness such asis shown in FIG. 3B, however other acceptable levels of surfaceroughness greater than atomic smoothness will also be preserved by thethermal evaporation technique.

FIGS. 4A-4C show a low temperature oxidation process that is used in oneembodiment to convert the deposited layer 320 into a gate oxide. Adeposited material layer 410 is shown in FIG. 4A on a substrate surface400. The layer 410 forms an interface 420 with the substrate surface400, and the layer 410 has an outer surface 430. The layer 410 in thisembodiment is deposited over a body region of a transistor, however thelayer may be deposited on any surface within the scope of the invention.

In FIG. 4B, the layer 410 is in the process of being oxidized. In oneembodiment, the oxidation process includes a krypton/oxygen mixed plasmaoxidation process. The mixed plasma process generates atomic oxygen oroxygen radicals in contrast to molecular oxygen or O₂ used inconventional thermal oxidation. The atomic oxygen in this embodiment isgenerated by microwave excitation of the krypton and oxygen environmentto form a high-density plasma. The atomic oxygen is introduced to thelayer from all exposed directions as indicated by arrows 440, creatingan oxide portion 450. The atomic oxygen continues to react with thelayer and creates an oxidation interface 422. As the reactionprogresses, atomic oxygen diffuses through the oxide portion 450 andreacts at the oxidation interface 422 until the layer is completelyconverted to an oxide of the deposited material layer. FIG. 4C shows theresulting oxide layer 450 which spans a physical thickness 452 from theouter surface 430 to the interface 420.

In one embodiment, the processing variables for the mixed plasmaoxidation include a low ion bombardment energy of less than 7 eV, a highplasma density above 10¹²/cm³ and a low electron temperature below 1.3eV. In one embodiment, the substrate temperature is approximately 400°C. In one embodiment, a mixed gas of 3% oxygen with the balance beingkrypton at a pressure of 1 Torr is used. In one embodiment, a microwavepower density of 5 W/cm² is used. In one embodiment, the oxidationprocess provides a growth rate of 2 nm/min.

The low substrate temperature of the mixed plasma oxidation processdescribed above allows the deposited layer to be oxidized at a lowtemperature, which inhibits the formation of unwanted byproducts such assilicides and oxides. The low temperature also inhibits migration ofelements such as dopant species. Low migration preserves designed atomicdistribution profiles, thus allowing more advanced device designs andproviding higher reliability in existing device designs. The mixedplasma process in one embodiment is performed at approximately 400° C.in contrast to prior thermal oxidation processes that are performed atapproximately 1000° C. The mixed plasma oxidation process has also beenshown to provide improved thickness variation on silicon (111) surfacesin addition to (100) surfaces. Although the low temperature mixed plasmaprocess above describes the formation of alternate material oxides, oneskilled in the art will recognize that the process can also be used toform SiO₂ oxide structures.

In one embodiment, a cobalt-titanium alloy forms an oxide comprised ofCoTiO₃. The cobalt-titanium oxide CoTiO₃ exhibits a dielectric constantof approximately 40, which allows for a thinner EOT than conventionalSiO₂. In addition to the stable thermodynamic properties inherent in theoxides chosen, the novel process used to form the oxide layer isperformed at lower temperatures than the prior art. This inhibitsreactions with the silicon substrate or other structures, and inhibitsunwanted migration of elements such as dopants.

A transistor made using the novel gate oxide process described abovewill possess several novel features. By creating an oxide material witha higher dielectric constant (k) and controlling surface roughnessduring formation, a gate oxide can be formed with an EOT thinner than 2nm. A thicker gate oxide that is more uniform, and easier to process canalso be formed with the alternate material oxide of the presentinvention, the alternate material gate oxide possessing an EOTequivalent to the current limits of SiO₂ gate oxides. The smooth surfaceof the body region is preserved during processing, and a resultingtransistor will have a smooth interface between the body region and thegate oxide with a surface roughness on the order of 0.6 nm.

Transistors created by the methods described above may be implementedinto memory devices and information handling devices as shown in FIG. 5,FIG. 6, and FIG. 7 and as described below. While specific types ofmemory devices and computing devices are shown below, it will berecognized by one skilled in the art that several types of memorydevices and information handling devices could utilize the invention.

A personal computer, as shown in FIGS. 5 and 6, include a monitor 500,keyboard input 502 and a central processing unit 504. The processor unittypically includes microprocessor 606, memory bus circuit 608 having aplurality of memory slots 612(a-n), and other peripheral circuitry 610.Peripheral circuitry 610 permits various peripheral devices 624 tointerface processor-memory bus 620 over input/output (I/O) bus 622. Thepersonal computer shown in FIGS. 5 and 6 also includes at least onetransistor having a gate oxide according to the teachings of the presentinvention.

Microprocessor 606 produces control and address signals to control theexchange of data between memory bus circuit 608 and microprocessor 606and between memory bus circuit 608 and peripheral circuitry 610. Thisexchange of data is accomplished over high speed memory bus 620 and overhigh speed I/O bus 622.

Coupled to memory bus 620 are a plurality of memory slots 612(a-n) whichreceive memory devices well known to those skilled in the art. Forexample, single in-line memory modules (SIMMs) and dual in-line memorymodules (DIMMs) may be used in the implementation of the presentinvention.

These memory devices can be produced in a variety of designs whichprovide different methods of reading from and writing to the dynamicmemory cells of memory slots 612. One such method is the page modeoperation. Page mode operations in a DRAM are defined by the method ofaccessing a row of a memory cell arrays and randomly accessing differentcolumns of the array. Data stored at the row and column intersection canbe read and output while that column is accessed. Page mode DRAMsrequire access steps which limit the communication speed of memorycircuit 608. A typical communication speed for a DRAM device using pagemode is approximately 33 MHZ.

An alternate type of device is the extended data output (EDO) memorywhich allows data stored at a memory array address to be available asoutput after the addressed column has been closed. This memory canincrease some communication speeds by allowing shorter access signalswithout reducing the time in which memory output data is available onmemory bus 620. Other alternative types of devices include SDRAM, DDRSDRAM, SLDRAM and Direct RDRAM as well as others such as SRAM or Flashmemories.

FIG. 7 is a block diagram of an illustrative DRAM device 700 compatiblewith memory slots 612(a-n). The description of DRAM 700 has beensimplified for purposes of illustrating a DRAM memory device and is notintended to be a complete description of all the features of a DRAM.Those skilled in the art will recognize that a wide variety of memorydevices may be used in the implementation of the present invention. Theexample of a DRAM memory device shown in FIG. 7 includes at least onetransistor having a gate oxide according to the teachings of the presentinvention.

Control, address and data information provided over memory bus 620 isfurther represented by individual inputs to DRAM 700, as shown in FIG.7. These individual representations are illustrated by data lines 702,address lines 704 and various discrete lines directed to control logic706.

As is well known in the art, DRAM 700 includes memory array 710 which inturn comprises rows and columns of addressable memory cells. Each memorycell in a row is coupled to a common wordline. Additionally, each memorycell in a column is coupled to a common bitline. Each cell in memoryarray 710 includes a storage capacitor and an access transistor as isconventional in the art.

DRAM 700 interfaces with, for example, microprocessor 606 throughaddress lines 704 and data lines 702. Alternatively, DRAM 700 mayinterface with a DRAM controller, a micro-controller, a chip set orother electronic system. Microprocessor 606 also provides a number ofcontrol signals to DRAM 700, including but not limited to, row andcolumn address strobe signals RAS and CAS, write enable signal WE, anoutput enable signal OE and other conventional control signals.

Row address buffer 712 and row decoder 714 receive and decode rowaddresses from row address signals provided on address lines 704 bymicroprocessor 606. Each unique row address corresponds to a row ofcells in memory array 710. Row decoder 714 includes a wordline driver,an address decoder tree, and circuitry which translates a given rowaddress received from row address buffers 712 and selectively activatesthe appropriate wordline of memory array 710 via the wordline drivers.

Column address buffer 716 and column decoder 718 receive and decodecolumn address signals provided on address lines 704. Column decoder 718also determines when a column is defective and the address of areplacement column. Column decoder 718 is coupled to sense amplifiers720. Sense amplifiers 720 are coupled to complementary pairs of bitlinesof memory array 710.

Sense amplifiers 720 are coupled to data-in buffer 722 and data-outbuffer 724. Data-in buffers 722 and data-out buffers 724 are coupled todata lines 702. During a write operation, data lines 702 provide data todata-in buffer 722. Sense amplifier 720 receives data from data-inbuffer 722 and stores the data in memory array 710 as a charge on acapacitor of a cell at an address specified on address lines 704.

During a read operation, DRAM 700 transfers data to microprocessor 606from memory array 710. Complementary bitlines for the accessed cell areequilibrated during a precharge operation to a reference voltageprovided by an equilibration circuit and a reference voltage supply. Thecharge stored in the accessed cell is then shared with the associatedbitlines. A sense amplifier of sense amplifiers 720 detects andamplifies a difference in voltage between the complementary bitlines.The sense amplifier passes the amplified voltage to data-out buffer 724.

Control logic 706 is used to control the many available functions ofDRAM 700. In addition, various control circuits and signals not detailedherein initiate and synchronize DRAM 700 operation as known to thoseskilled in the art. As stated above, the description of DRAM 700 hasbeen simplified for purposes of illustrating the present invention andis not intended to be a complete description of all the features of aDRAM.

Those skilled in the art will recognize that a wide variety of memorydevices, including but not limited to, SDRAMs, SLDRAMs, RDRAMs and otherDRAMs and SRAMs, VRAMs and EEPROMs, may be used in the implementation ofthe present invention. The DRAM implementation described herein isillustrative only and not intended to be exclusive or limiting.

CONCLUSION

Thus has been shown a gate oxide and method of fabricating a gate oxidethat produce a more reliable and thinner equivalent oxide thickness.Gate oxides formed cobalt-titanium alloy are thermodynamically stablesuch that the gate oxides formed will have minimal reactions with asilicon substrate or other structures during any later high temperatureprocessing stages. CoTiO₃ in particular has been shown to provideexcellent electrical and thermodynamic properties. In addition to thestable thermodynamic properties inherent in the gate oxide of theinvention, the process shown is performed at lower temperatures than theprior art. This inhibits reactions with the silicon substrate or otherstructures, and inhibits unwanted migration of elements such as dopants.

Transistors and higher level ICs or devices have been shown utilizingthe novel gate oxide and process of formation. The higher dielectricconstant (k) oxide materials shown in one embodiment are formed with anEOT thinner than 2 nm, e.g. thinner than possible with conventional SiO₂gate oxides. A thicker gate oxide that is more uniform, and easier toprocess has also been shown with at EOT equivalent to the current limitsof SiO₂ gate oxides.

A novel process of forming a gate oxide has been shown where the surfacesmoothness of the body region is preserved during processing, and theresulting transistor has a smooth interface between the body region andthe gate oxide with a surface roughness on the order of 0.6 nm. Thissolves the prior art problem of poor electrical properties such as highleakage current, created by unacceptable surface roughness.

Although specific embodiments have been illustrated and describedherein, it will be appreciated by those of ordinary skill in the artthat any arrangement which is calculated to achieve the same purpose maybe substituted for the specific embodiment shown. This application isintended to cover any adaptations or variations of the presentinvention. It is to be understood that the above description is intendedto be illustrative, and not restrictive. Combinations of the aboveembodiments, and other embodiments will be apparent to those of skill inthe art upon reviewing the above description. The scope of the inventionincludes any other applications in which the above structures andfabrication methods are used. The scope of the invention should bedetermined with reference to the appended claims, along with the fullscope of equivalents to which such claims are entitled.

What is claimed is:
 1. A method of forming a transistor, comprising:forming first and second source/drain regions; forming a body regionbetween the first and second source/drain regions; evaporationdepositing a substantially amorphous metal alloy layer on the bodyregion; oxidizing the metal alloy layer to form a metal oxide layer onthe body region; and coupling a gate to the metal oxide layer.
 2. Themethod of claim 1, wherein evaporation depositing the metal alloy layerincludes evaporation depositing cobalt and titanium.
 3. The method ofclaim 1, wherein evaporation depositing the metal alloy layer includesevaporation depositing by electron beam evaporation.
 4. The method ofclaim 3, wherein electron beam evaporation depositing the metal alloylayer includes electron beam evaporation of a single metal alloy target.5. The method of claim 1, wherein evaporation depositing the metal alloylayer includes evaporation depositing at an approximate substratetemperature range of 100-150° C.
 6. The method of claim 1, whereinoxidizing the metal alloy layer includes oxidizing at a temperature ofapproximately 400° C.
 7. The method of claim 1, wherein oxidizing themetal alloy layer includes oxidizing with atomic oxygen.
 8. The methodof claim 1, wherein oxidizing the metal alloy layer includes oxidizingusing a krypton (Kr)/oxygen (O₂) mixed plasma process.
 9. A method offorming a memory array, comprising: forming a number of transistors,comprising: forming first and second source/drain regions; forming abody region between the first and second source/drain regions;evaporation depositing a substantially amorphous metal alloy layer onthe body region, wherein the metal alloy layer is more pure than anevaporation target material; oxidizing the metal alloy layer to form ametal oxide layer on the body region; coupling a gate to the metal oxidelayer; forming a number of wordlines coupled to a number of the gates ofthe number of access transistors; forming a number of sourcelinescoupled to a number of the first source/drain regions of the number oftransistors; and forming a number of bitlines coupled to a number of thesecond source/drain regions of the number of transistors.
 10. The methodof claim 9, wherein evaporation depositing the metal alloy layerincludes evaporation depositing cobalt and titanium.
 11. The method ofclaim 9, wherein evaporation depositing the metal alloy layer includesevaporation depositing by electron beam evaporation.
 12. The method ofclaim 11, wherein electron beam evaporation depositing the metal alloylayer includes electron beam evaporation of a single metal alloy target.13. The method of claim 9, wherein evaporation depositing the metalalloy layer includes evaporation depositing at an approximate substratetemperature range of 100-150° C.
 14. The method of claim 9, whereinoxidizing the metal alloy layer includes oxidizing at a temperature ofapproximately 400° C.
 15. The method of claim 9, wherein oxidizing themetal alloy layer includes oxidizing with atomic oxygen.
 16. The methodof claim 9, wherein oxidizing the metal alloy includes oxidizing using akrypton (Kr)/oxygen (O₂) mixed plasma process.
 17. A method of formingan information handling system, comprising: forming a memory array,comprising: forming a number of access transistors, comprising: formingfirst and second source/drain regions; forming a body region between thefirst and second source/drain regions; evaporation depositing a metalalloy layer on the body region; oxidizing the metal alloy layer to forma metal oxide layer on the body region; coupling a gate to the metaloxide layer; forming a number of wordlines coupled to a number of thegates of the number of access transistors; forming a number ofsourcelines coupled to a number of the first source/drain regions of thenumber of access transistors; forming a number of bitlines coupled to anumber of the second source/drain regions of the number of accesstransistors; and coupling a system bus between the memory array and aprocessor.
 18. The method of claim 17, wherein evaporation depositingthe metal alloy layer includes evaporation depositing cobalt andtitanium.
 19. The method of claim 17, wherein evaporation depositing themetal alloy layer includes evaporation depositing by electron beamevaporation.
 20. The method of claim 19, wherein electron beamevaporation depositing the metal alloy layer includes electron beamevaporation of a single metal alloy target.
 21. The method of claim 17,wherein evaporation depositing the metal alloy layer includesevaporation depositing at an approximate substrate temperature range of100-150° C.
 22. The method of claim 17, wherein oxidizing the metalalloy layer includes oxidizing at a temperature of approximately 400° C.23. The method of claim 17, wherein oxidizing the metal alloy layerincludes oxidizing with atomic oxygen.
 24. The method of claim 17,wherein oxidizing the metal alloy layer includes oxidizing using akrypton (Kr)/oxygen (O₂) mixed plasma process.
 25. A method of forming atransistor, comprising: forming first and second source/drain regions;forming a body region between the first and second source/drain regions;evaporation depositing a metal alloy layer on the body region using asingle alloy target material; maintaining a substrate temperaturebetween approximately 100 degrees C. and 150 degrees C. duringevaporation deposition; oxidizing the metal alloy layer to form a metaloxide layer on the body region; and coupling a gate to the metal oxidelayer.
 26. The method of claim 25, wherein oxidizing the metal alloylayer includes oxidizing with an atomic oxygen source.
 27. The method ofclaim 26, wherein oxidizing with an atomic oxygen source includesforming a plasma oxygen source with an ion bombardment energy of lessthan approximately 7 eV.
 28. The method of claim 27, wherein oxidizingwith an atomic oxygen source includes forming a plasma oxygen sourcewith a plasma density above approximately 10¹²/cm³.
 29. The method ofclaim 26, wherein oxidizing with an atomic oxygen source includesforming a plasma using a mixed gas of approximately 3% oxygen and abalance of krypton.